| 摘要 |
PURPOSE:To form a uniform impurity diffused region near the surface of a hole or a projection of a substrate by externally diffusing an impurity contained in a thin film. CONSTITUTION:Element separating and barrier films 2, 3 a polycrystalline silicon film 4 and a mask 7 are formed on a silicon substrate 1. Then, with the mask 7 deep grooves 9 are sequentially formed in a hole 8 and the substrate 1, the film 3 is removed, and the surface of the substrate 1 is exposed. Then, a heat treatment is executed in an inert gas, arsenic contained in the film 4 is externally diffused, and an impurity diffused layer 10 is formed on the exposed portion of the substrate 1. Then, the films 4 and 3 are sequentially removed, and a capacitive insulating film 11 is formed on the surface of a MOS capacity unit which includes the side of the hole. Then, a polycrystalline silicon film 12 containing phosphorus is buried in the hole 9 to form a capacitive electrode. Then, a gate electrode 13, and a source drain region 14 are formed by known steps to complete a dynamic memory cell. |
