| 摘要 |
PURPOSE:To improve a light emitting state, by making the resistance of the outer surface part of a semiconductor crystal high, thereby alleviating the concentration of an electric field in the vicinity of an upper electrode. CONSTITUTION:Crystal growth of ZnSe layer 11 is performed on a GaAs sub strate 10. At this time, the amount of an N type dopand, e.g., Ga is slowly reduced. Carrier concentration (cm<-3>) (a) is slowly reduced from the carrier concentration of 5X10<17>(cm<-3>) in an inherent light emitting region to about 1X10<-5>(cm<-3>) at the surface along about 2mum. Thus a high resistance region 11a is obtained. Thereafter, the surface of the ZnSe layer 11 is etched to the depth of about 2mum. A part, where the carrier concentration is changed, is removed, and a recess 12 is formed. Aninsulating film 13 is formed on the ZnSe layer 11. An upper electrode 14 is provided at a part directly on the recess. A side electrode 1l5 is formed on the side surface of the ZnSe layer 11. In this way, an MIS-type light emitting diode is completed. Thus the resistance of the outer part of the semiconductor crystal becomes high, the concentration of the electric field in the vicinity of the upper electrode becomes less and light emitting distribution becomes even. |
