| 摘要 |
PURPOSE:To prevent the damage of a semiconductor substrate as a basis material, by attaching a protecting metal layer on an insulating film, in which a contact hole is formed, and forming an opening in correspondence with the contact hole in the protecting metal layer. CONSTITUTION:A contact hole 4 is provided in an interlayer insulating film 3 in order to provide electric connection to an upper metal wiring. A thin protecting metal film 5, whose thickness is about 100-500Angstrom is deposited on the entire surface so as to cover the interlayer insulating film 3 and the contact hole 4 for the purpose of preventing damage. With respect to the protecting film 5, the part of the contact hole 4 is removed by a photolithography method. Then cleaning treatment such as ion etching of Al or sputtering is performed through an opening part 6. The contaminated material at the part of a basis metal layer 2 in the contact hole 4 is removed. Then, an upper metal layer 7 is attached to the entire surface from the upper side of the protecting film 5 through the contact hole 4. An upper electrode pattern 8 is formed by photolithography technology with respect to the metal layer 7. |
