| 摘要 |
PURPOSE:To improve characteristics such as light sensitivity and response speed, by providing a BPT, which has a heterogeneous junction in an electrostatic induction phototransistor (SIPT) having a heterojunction at a gate or in a base. CONSTITUTION:From the surface of a SIPT having a heterojunction at a gate, light having a wavelenth, whose generating depth is about the thickness of high resistance regions 302-304, is inputted. Then, pairs of electrons and holes are generated in the high resistance regions in the SIPT. An electron 322 flows into an n<+> drain region by an electric field. A hole 323 is stored in a gate heterojunction plane, whose potential is the lowest. By the stored holes, the potentials at the gate heterojunction and a gate point G* are decreased. The electrons are injected from an n<+> source region 301 through a channel region 303. A current, which is obtained by amplifying a light signal, flows. Potential increase, when the electrons in the n<+> source region are injected in the channel, is considerably small. Therefore, high speed operation can be realized. |
