| 摘要 |
PURPOSE:To enhance the reliability of an element, by covering the side wall of the one side of a recess, exposing a part of a first gallium arsenide layer at the bottom surface of the recess, forming a gate electrode, and reducing source resistance. CONSTITUTION:On a GaAs substrate 1, the following parts are sequentially and continuously grown: an undoped GaAs layer 2 as a two-dimensional electron gas feeding layer, a first n-AlGaAs layer 3 as a two-dimensional electron gas feeding layer, a first n-GaAs layer 4 as a cap layer, a second n-AlGaAs layer 9 and a second n-GaAs layer 10. Then, AuGe/Au are sequentially evaporated and a source electrode 5 and a drain electrode 6 are formed. Thereafter, resist 7 is applied on the entire surface of the substrate. After patterning, a hole for a gate forming region is provided. With the remaining resist 7 as a mask, anisotropic etching in the vertical direction with respect to the n-GaAs layer 10 is performed until the n-AlGaAs layer 9 is exposed. Thus a recess is formed. The n-AlGaAs layer 9 is removed by selective wet etching. Al is evaporated obliquely so that the Al is hooked on the source side of the recess. The resist is lifted off, and the Al other tan in the gate region is removed. Thus a gate electrode 8 is formed. |
