| 摘要 |
PURPOSE:To be suitable for providing a large film area and to easily achieve raising of the productivity and mass production of a film by introducing an active species chemically interacting with a germanium compound, and causing discharge energy to act thereon. CONSTITUTION:A deposited film is formed on a substrate by separately introducing, into the film formation space for forming a deposited film on the substrate, a germanium compound and an active species which is generated by decomposition of a compound containing silicon and halogen and chemically interacts with the germanium compound, and causing discharge energy to act on these, thereby exciting the germanium compound to react. By using an active species which was previously activated in a space different from the film formation space, the film formation rate can rapidly be made greater than the conventional CVD method, and the substrate temperature when forming a deposited film can also be made lower. By this, deposited film having stable film quality can be industrially provided in large quantities and at low cost. |
