| 摘要 |
Prodn. of thin film semiconductor elements, esp. solar cells, involves the deposition of a doped and then an intrinsic film contg. Si and/or Ge and opt. hydrocarbon on a metal (oxide) film, deposition of the intrinsic film being carrier out by plama-induced decomposition of a gas contg. Si and/or Ge. The novelty is that the doped film (3,8) is deposited on the metal (oxide) film (2,7) by thermally-induced decomposition of a gas contg. Si and/or Ge. The doped film is produced by photochemically-induced decomposition on a metal, esp. steel film.
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