| 摘要 |
PURPOSE:To enable to easily manufacture an MOS transistor with the drain in an offset structure by a method wherein a plasma etching is performed on a polycrystalline silicon film using a silicon dioxide film as a mask and a newly formed silicon dioxide film is used as a mask for forming the electrodes. CONSTITUTION:A gate oxide film 2 and a polycrystalline silicon film 3 are deposited on the main surface of the silicon substrate. After phosphorus P is diffused, a silicon dioxide film 10 is deposited. Electrode patterns are transferred on the silicon dioxide film 10 using a photo resist 11. Then, an etching is performed on the polycrystalline silicon film 3 using the silicon dioxide film 10 as a mask. Then, arsenic ions are implanted to form N<+> type implanted layers 4. Then, the silicon dioxide film 10 is removed using hydrofluoric solution, phosphorus ions are implanted and N<-> type implanted layers 7 are formed in a self-matching manner to the polycrystalline silicon film 3. A silicon dioxide film 8 is deposited thereon, electrodes 9 are formed using the silicon dioxide film 8 as a mask and the protective film is formed. |
