发明名称 THIN FILM TRANSISTOR
摘要 PURPOSE:To contrive the reduction and simplification of the manufacturing process and the improvement in productivity by a method wherein gate electrodes and display picture element electrodes are formed at the same time by a single patterning process with a clear conductive film deposited at the same time. CONSTITUTION:A semiconductor is deposited on an insulation substrate 1 of glass or the like and patterned in required shape into a semiconductor layer 2. Metals for source and drain electrodes are deposited and patterned in required shape into a source electrode 4 an a drain electrode 3. Next, a gate insulation film 5 is deposited, and a contact hole is opened in the drain electrode. Then, a clear conductive film is deposited, and a display picture element electrode 7 and a gate electrode 6 are patterned at the same time. This process improves the productivity of a reactive matrix liquid crystal display panel and can reduce the manufacturing cost.
申请公布号 JPS6197864(A) 申请公布日期 1986.05.16
申请号 JP19840217349 申请日期 1984.10.18
申请人 ASAHI GLASS CO LTD 发明人 SUEKANE MICHINOBU
分类号 H01L29/78;G02F1/1333;G09F9/35;H01L21/336;H01L27/12;H01L29/786 主分类号 H01L29/78
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