SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

摘要

PURPOSE:To reduce the contact hole fitting allowance for minimizing and accelerating elements by a method wherein polysilicon layer is formed on a borderline between diffusion layers and a field insulating film coming into contact with each other on the surface of substrate. CONSTITUTION:Polysilicon is deposited to be patterned into a basic film 8 of contact electrode and then a high concentration N<+> type layer 9 is formed by ion-implanting process through the intermediary of the basic film 8. A low concentration N<-> type layer 6 and the high concentration N<+> type layer 9 are respectively formed into a source diffusion layer and a drain diffusion layer. Besides, the basic film 8 is patterned to extend to a field insulating film 2 side rather than the borderline between the field insulating film 2 and the diffusion layers coming into contact with each other on the surface of substrate. An aluminium contact electrode 11 may be formed by means of depositing an interlayer insulating film 10 such as PSG etc. and opening a hole for contact electrode. Through these procedures, the contact hole fitting allowance may be freely adjusted since the contact electrode of diffusion layers is formed through the intermediary of polysilicon as the basic film 8.