发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To contrive to improve the reliability by preventing the deterioration in element characteristics by a method wherein an electrode is formed by a coat of Ti layer on a semiconductor contact layer, next a coat or more of Pt layer and Ti layer in this order, and successive coats of Pt layer and Au layer thereon. CONSTITUTION:As the p-electrode, using electron beam deposition, the contact layer 6 is coated first with a Ti layer 7 and next with Ti-layers/Pt-layers by five-time repetition in this order, resulting in the formation of an intermediate multilayer structure 11; finally, it is coated with a Pt-layer 8, which is then coated with an Au layer 9 by a normal electrolytic plating. Thereafter, heat treatment is carried out to take ohmic contact between the contact layer 6 and the Ti layer 7. Next, after adhesion of an Au-Ge-Ni layer 10 as the n- electrode, ohmic contact is taken by forming an alloy layer on heat treatment. Then, the resonator is formed by cleavage in the direction parallel with the drawing.
申请公布号 JPS6197890(A) 申请公布日期 1986.05.16
申请号 JP19840218914 申请日期 1984.10.18
申请人 FUJITSU LTD 发明人 FURUMIYA SATOSHI;MORIMOTO MASAHIRO
分类号 H01L33/14;H01L33/30;H01L33/40;H01S5/00;H01S5/042 主分类号 H01L33/14
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