INJECTION LOGIC SEMICONDUCTOR DEVICE

摘要

PURPOSE:To produce a semiconductor element with fast and stable workability by means of inserting a diode into the space between base and ground of PNP transistor of I<2>L. CONSTITUTION:A P type buried region 9 is formed of an anode of diode to be inserted into the space between a base and ground of a lateral PNP transistor together with a deep P type diffusion region 11 and then shortcircuited by a conductive material on an N type epitaxial layer 3 of the base region of PNP transistor and a contact window 12. Besides, oxide film separating regions 10 separate an N type buried layer 2 and collectors 4 of PNP transistor into two parts to be mutually shortcircuited by the conductive material 8. Moreover, the deep P type diffusion region 1 and the base region 3' of PNP transistor are connected to each other by the contact window 12 while the N type buried region on the side forming the PNP transistor and the epitaxial layer on the side forming the NPN transistor are shortcircuited by another conductive material 13 on the contact window 12.