| 摘要 |
PURPOSE:To contrive a reduction in the parasitic resistance between the gate and the source and the improvement of the reverse gate withstand voltage and to suppress the fluctuations of threshold voltage by a method wherein insulating films are made to interpose between the lower parts of the gate electrode, where are located just under its gate lengthwise peripheral edges, and the channel layer, and the gate and the drain are formed in a self-matching manner using the gate electrode and the insulating films as masks. CONSTITUTION:Silicon ions are implanted in a GaAs semiconductor substrate 1 to form a channel layer 2. After that, a silicon nitride film 3 (insulating film) is deposited on the whole surface. An activation annealing is performed through the insulating film 3. Then, a perforation processing for gate is performed on the insulating film 3 to open a hole 4 on the insulating film 3. The effective gatelength of the gate electrode to be formed is decided by this hole 4. A gate metal film 5 of such a high-melting point metal as molybdenum silicide is deposited on the whole surface and a photo- etching processing is performed on the gate metal film 5 and the insulating film 3 to form the gate electrode 6 and insulating films 7 just under the gate electrode 6. A photo resist 8 is formed and silicon ions are implanted using the gate electrode 6 and the insulating films 7 as masks. Accordingly, the high-concentration source and drain semiconductor regions 9 and 10 are formed in a self-matching manner. |
