| 摘要 |
PURPOSE:To prevent the fluctuations of threshold voltage by a method wherein the electrode being brought into contact with the semiconductor region, which is fixed at a constant potential, is made to interpose between the passivation film and the gate electrode through an insulating film. CONSTITUTION:An electrode 8 being brought into contact with a source region 3 is made to interpose between a passivation film 11 and a gate electrode 6 through a gate interlayer insulating film 7. Accordingly, such a trouble that the charge in the passivation film 11 shifts into an SiO2 film 5 when the package is sealed or at the time of the heat treatment process other than the sealing process of package and an effect is exerted on the amount of surface charge or the amount of interfacial surface charge is prevented by this electrode 8, while when the reference voltage circuit is actuated, the same potential as that of the source region is applied on the gate electrode. However, the effect of the potential is cancelled, because the potential of the source region is impressed on both of the two transistors, wherein a reverse conductive-type impurity to that of the gate region is introduced, for making the reference voltage generate and no effect is exerted on the generation of the reference voltage. |
