| 摘要 |
PURPOSE:To reduce the thermal stress at bonding interface of element by a method wherein an amorphous layer made of single crystal material is formed on a semiconductor substrate made of the same material. CONSTITUTION:A refract metal layer 6 made of e.g. tungsten upto 2,000Angstrom thick is deposited on an amorphous Si layer 5. Later the refract metal layer 6 made of tungsten is heat-treated to be formed into specified shape. A semiconductor device so far formed may be provided with stable characteristics subject to no deterioration in strength against repeated thermal stress since there is no remarkable difference in the thermal expansion coefficient of semiconductor substrate 1 made of Si single crystal, Si epitaxial layer 2 and amorphous Si layer 5. |
