| 摘要 |
PURPOSE:To prevent a failure in operation even when the threshold value of the E-FET of a switch element is almost zero by giving a transfer gate a sufficiently high threshold value in a directly coupled field-effect transistor circuit (DCFL). CONSTITUTION:A logical gate part E-FET5 has its threshold value nearly 0V and also has slight variance and is sometimes at a negative side as to DCFL composed of an N-channel GaAs MESFET. The FET3 constituting the transfer gate, however, has a sufficiently high threshold value, so it never turns on almost at 0V, so that there is no failure in operation when the transfer gate is off. A D-FET4 as a load is a normally on type, so there is not such malfunction that it turns off. Therefore, the variance when the threshold value of the E-FET of the switch element is set almost to 0V is irrelevant to the operation and a high-speed GaAs integrated circuit is manufacture with high yield. |
