发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To shorten the pitch between gate electrodes by a method wherein a gate electrode of one MISFET of flip-flop circuit composed of two MISFETs is extended for cross connection. CONSTITUTION:One end of MISFET Q1, Q2 is connected to a wiring for power supply voltage Vcc and a gate gate electrode of the other MISFET Q2, Q1 and a switching MISFET while the other end is connected to another wiring for reference voltage. These resistance elements R1, R2 control the current from the wiring for power supply voltage Vcc stably storing any written data to be self-biased. Through these procedures, any wiring for cross connection between gate electrodes may be eliminated.
申请公布号 JPS6197962(A) 申请公布日期 1986.05.16
申请号 JP19840218471 申请日期 1984.10.19
申请人 HITACHI LTD 发明人 IKEDA SHUJI;NAGASAWA KOICHI;MEGURO SATOSHI;YAMAMOTO AKIRA
分类号 H01L27/04;G11C11/40;H01L21/822;H01L21/8244;H01L27/10;H01L27/11;H01L29/78 主分类号 H01L27/04
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