MANUFACTURE OF FIELD EFFECT SEMICONDUCTOR DEVICE

摘要

PURPOSE:To remarkably improve the production yield by a method wherein a semiconductor device is discarded when judged to be unacceptable after examination of its saturated drain current characteristics. CONSTITUTION:A voltage is applied across a source electrode 4 and drain electrode 5 for the application of a saturation drain current. The value of the saturation drain current with a recess 8 already in existence depends on the design of the field effect semiconductor device. The saturation drain current is measured to decide if a specimen device is acceptable. A non-saturation feature means a current leaking mainly into a buffer zone 2 and the involved device is discarded. By this, field effect semiconductor devices of excellent performance characteristics only may be produced, at a high yield.