发明名称 PHOTO CHEMICAL VAPOR DEPOSITION METHOD
摘要 PURPOSE:To extremely widen the selective range of applicable light source having no depositing effect on the inner wall of reaction chamber including photoirradiating window by a method wherein laser beams are focused on a reactive gas for irradiation in the two different directions while a multiple photon dissociating process to locally decompose the reactive gas is provided. CONSTITUTION:So-called dissociation due to multiple photons may be activated in the reactive gas near a point P on substrate whereon laser lights L1, L2 are focused to accelerate vapor re-action due to chemical decomposition locally depositing an aluminium conductive film. At this time, the reactive gas near the optical path of laser lights being hardly excited, the aluminium conductive film may not be deposited on the inner wall of reaction chamber 1 and the inner member surface of photo irradiating window 2 to prevent the throughput performance form deteriorating due to pollution. Besides, the reactive gas may be made atmospheric with no sensitizer added thereto at all since the laser lights may not be absorbed into the surface whereon they are not focused. A vapor growing film several mum-sub mum thick may be deposited by means of controlling the laser light focused region further easily forming an aluminium wiring pattern around 1mum wide if a laser light scanner is provided.
申请公布号 JPS6196725(A) 申请公布日期 1986.05.15
申请号 JP19840217725 申请日期 1984.10.17
申请人 NEC CORP 发明人 KASAMA KUNIHIKO
分类号 H01L21/205;H01L21/263;H01L21/31 主分类号 H01L21/205
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