| 摘要 |
PURPOSE:To prevent the conductor for wiring from vanishing due to a reaction of the conductor for wiring to the insulating film between the wiring layers in a semiconductor device by method wherein the semiconductor device is constituted in the structure, wherein the conductor for wiring is held between the phosphorus impurity-containing oxide film (PSG film) and the insulating film to be formed by a plasma or sputtering growth method and so forth. CONSTITUTION:The diagram (a) shows the semiconductor device in the structure, wherein a conductor 2 for wiring is held between a PSG film 3 and an insulating film to be formed by a plasma or sputtering growth method and so forth, a nitride film 1. The diagram (b) shows the semiconductor device in the structure, wherein second insulating films 4 (such as silica films) are added to a PSG film 3 and an insulating film 1 to be formed by a plasma or sputtering growth method and so forth. According to these wiring structures, a reaction of the conductor 2 for wiring to the insulating film 1 can be prevented by the PSG film 3, and furthermore, the bad effect to affect the electrical characteristics of the semiconductor device in the MOS structure can be also prevented. |
