PRODUCTION METHOD OF METAL CONTACT LAYERS IN SEMICONDUCTORS STRUCTURES,申请号CS19840008720-传众专利搜索

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发明名称	PRODUCTION METHOD OF METAL CONTACT LAYERS IN SEMICONDUCTORS STRUCTURES
摘要
申请公布号	CS242655(B1)	申请公布日期	1986.05.15
申请号	CS19840008720	申请日期	1984.11.15
申请人	MAY,JAN,CS;PINA,BOHUMIL,CS;LOUDA,JAROMIR,CS;HARTMAN,JAN,CS;KUCERA,KAREL,CS;HOMOLA,JAROSLAV,CS;KALENDA,LIBOR,CS	发明人	MAY,JAN,CS;PINA,BOHUMIL,CS;LOUDA,JAROMIR,CS;HARTMAN,JAN,CS;KUCERA,KAREL,CS;HOMOLA,JAROSLAV,CS;KALENDA,LIBOR,CS
分类号	H01L21/428;(IPC1-7):H01L21/428	主分类号	H01L21/428
代理机构		代理人
主权项
地址

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