| 摘要 |
PURPOSE:To improve the static breakdown preventing effect by a method wherein a diffusion layer region, equipped with conductivity opposite in type to the semiconductor substrate and buried as a static breakdown preventing element in said semiconductor substrate, is provided between a terminal and internal circuit and serves as a resistor as well as a diode. CONSTITUTION:The bottoms of N<+> type diffusion layer regions 25, 26 are connected to an N<+> type diffusion layer 22 built within a silicon substrate 21. A terminal and an internal circuit are connected with the intermediary of the diffusion layer regions 25, 26 opposite in the type of conductivity to the substrate 21 and buried therein. In a device designed as such, the effective area increases of the diode consisting of the P type silicon substrate 21 and N<+> type diffusion layer region 22, without an increase of the pattern area between the terminal serving as a static breakdown preventing element and the inner circuit. The backward breakdown of the diode is to take place at the area of contact between a channel stopper 23 that is a P<+> type diffusion layer region and the N<+> type diffusion layer region 22. The current discharging capability may be enhanced because the area of contact is larger than in the conventional technique by the size of the upper surface of the N<+> type diffusion layer region 22. |
