METHOD OF INDUCING FLOW OR DENSIFICATION OF PHOSPHOSILICATE GLASS FOR INTEGRATED CIRCUITS

摘要

Phosphorus-doped silicon oxide glass is flowed on an integrated circuit by raising the pressure in which that integrated circuit is placed above atmospheric for a selected period of time and heating said phosphosilicate glass to a selected temperature sufficient to cause said glass to flow at said pressure. The atmosphere in which the device is placed inciudes moisture to enhance the flow of the glass at temperatures substantially beneath those at which dopants in the underlying integrated circuit move. The result is that the electrical characteristics of the integrated circuit are not substantially altered during glass flow.