| 摘要 |
PURPOSE:To eliminate the generation of uncoupled bonds by adding heat energy or heat energy and light energy of <=300nm wavelength to a gaseous silicon fluoride contg. Si2F6, and forming a coated film consisting essentially of silicon on the surface to be coated. CONSTITUTION:Si2F6 is supplied from 11, and discharged by a vacuum pump 14 from a discharge port 7 through a pressure regulating valve 12 and a stop valve 13. Ten lamps 4 (low-voltage mercury-vapor lamp) for generating light of <=300nm wavelength and their related electric power source system 5 are used for the photochemical reaction. Some gaseous hydrogen is introduced into a lamp chamber 28 from 24 to prevent the reflux of a reactive gas, and heated to about 600 deg.C by a heater 25 to decompose a refluxed undercomposed silicon compd. The pressure in the lamp chamber 28 is equalized with the pressure in the reaction chamber 1 by regulating a valve 27 to prevent the breakage of the quartz glass 26 of the window. |
