| 摘要 |
PURPOSE:To shorten the forming time of a high melting point metal gate electrode film and to also prevent the gate withstand voltage of an FET from decreasing by first coating with low power and then coating with high power subsequently raised when a high melting point metal film is formed by a sputtering method. CONSTITUTION:A sample is inserted into a sputtering unit, a W film having 100nm of thickness is coated with 1W/cm<2> of power density by a W target, the power is then raised to 3W/cm<2>, and the W film having 400nm of thickness is subsequently coated. Then, a resist pattern is removed to form a gate electrode 11. Then, with the resist film and the gate electrode 1 as masks Si ions are implanted, the resist film is then removed, an SiO2 film is again formed on the surface, and an N<+> type layer 5 is formed by annealing. After an AuGe/Ni is eventually deposited in vacuum, it is alloyed at 400 deg.C to form source and drain electrodes 2, 3. |
