| 摘要 |
PURPOSE:To make it feasible to enlarge the diameter of semiconductor wafer by a method wherein the width of scribing lines at the central part of photomask is equalized to that of photomask utilized for bonded exposure but gradually narrowed as the scribing lines approach to the periphery. CONSTITUTION:In the figure 2, a photomask for contact printing 1 is bonded on a pattern forming plane while the width of scribing lines discriminating multiple chip regions 6, 6 is equalized. On the other hand, in the figure 1, another photomask for noncontact printing 11 is slightly separated from the pattern forming plane while the width of multiple vertical and horizontal scribing lines 8, 8 is gradually narrowed down as they approach to the periphery. In such an arrangement, the difference between the width of scribing lines at the central part and that of scribing lines at the peripheral part amounts 0.5-3mum. |
