Amplifier arrangement for gallium-arsenide transistors

摘要

A push-pull amplifier which, except for an adjustable resistor, is constructed exclusively by means of gallium-arsenide field-effect transistors. The load impedances for the amplifier transistors are formed by field-effect transistors whose gate and source electrodes are connected to one another, while the level-shifting diodes are formed by field-effect transistors whose drain and source connections are connected to one another so that only the Schottky junction is then effective. The amplitude of the output voltage of both amplifier branches can be set simultaneously by means of an adjustable source resistor which is common to both amplifier branches.