| 摘要 |
PURPOSE:To improve the insulating withstand voltage between the gate electrode and the wiring even though the film thickness of the insulating film between a pair of the conductor layers is thin by a method wherein the insulating film is formed of a silicon nitride film, a silicon oxide film and a silicate glass film. CONSTITUTION:A silicon nitride film 14 is made to grow in a thickness of 400Angstrom or thereabouts, for example, as the first insulating film by an ordinary chemical vapor-phase growth method. Subsequently, a polycrystalline silicon film is made to grow in a thickness of 500Angstrom , for example, by an ordinary decompression chemical vapor-phase growth method, an oxidation is performed in an atmosphere of vapor for 50min at 900 deg.C, for example, and a silicon oxide film 15, which is the second insulating film, is formed. The film thickness of this silicon oxide film 15 becomes 1,000Angstrom or thereabouts and is uniform despite the roughened surface. By this way, a failure of insulating withstand voltage between the conductor layers due to a decrease in the insulating film between the conductive layers, which is caused by the edge parts with such protruded parts as electrode and wiring and the reduction of the film thickness of the insulating film at the recessed part, is never generated and the improvement of the ratio of the non-deflective of semiconductor device to the defective thereof is brought. Then, a PSG film 16 is formed on the silicon oxide film 15 by a chemical vapor-phase growth method as the third insulating film. |
