| 摘要 |
PURPOSE:To largely improve the reliability by forming a wavy edge of an insulating film of an SiO2 film formed on the surface of a semiconductor, thereby dispersing a stress applied to a crystal. CONSTITUTION:An SiO2 film 2 is formed in a thickness of 0.3mum on a P type InGaAsP electrode forming layer 9, and an average width is formed to become 10mum in (110) direction at the top of a mesa stripe 7. The edge of the film 2 is corrugated in a sinusoidal wave shape, and its period is 10mum and the amplitude W is 6mum. The edge of the film 2 is formed in wavy shape, a stress applied to a crystal is dispersed to enhance the reliability. |
