| 摘要 |
PURPOSE:To obtain an element which does not show deterioration in transfer efficiency and high transfer charges by forming a semiconductor region just under the gate insulation film of charge transfer element in the sequence of a low impurity concentration region of the one conductivity type or reverse conductivity type, a high impurity concentration region of the one conductivity type and a high impurity concentration region of reverse conductivity type. CONSTITUTION:Boron is implanted to an n type or p type substrate 10 and a p type region 11 is formed by heat processing. An impurity-undoped epitaxial layer 12 is caused to grow thereon. Next, a field oxide film 13 and a p type channel stopper region 14 are formed in the region other than the CCD forming region. Next, with the field oxide film 13 used as the mask, phosphorus or arsenic is doped by ion implantation method to the CCD forming region. During the heat processing, phosphorus or arsenic is vaporized from the surface and simultaneously diffused into the silicon. An n type region 15 is formed near the surface, while an n type region 16 having higher impurity concentration is formed to the region separated by about 0.1mum from the surface. Next, a gate insulation film 17 and n<+> type polycrystalline silicon film 18 are formed. |
