发明名称 METHOD OF PATTERN FORMING
摘要 PURPOSE:To easily form the minute pattern by selectively eliminating only the weak parts of the coating film in contact with the pattern surface and forming the aperture pattern on the coating film. CONSTITUTION:On the substrate 1, the pattern 3 is formed with the photo resist material. This pattern is composed of small bell jar-shaped projections or an assembly of them. Next, on the substrate 1, the material film 2 is formed vertically to the substrate 1 by the directional film coating method. Then, the weak parts of the film 2' are selectively eliminated by the dry etching or the wet etching using reaction gas or chemicals suitable to the kinds of the material film 2, and the film part 2-1 and 2-2 are separated from each other. The etching treatment is proceeded till the area of contact part of the film part 2-1 and the top part of the pattern 3 disappear, or the etching treatment with another conditions is added thereto. After all, the film part 2-1 is completely separated and eliminated from the pattern 3, or the pattern 3 is dissolved and eliminated from its exposed side, so that the film part 2-1 is removed. Finally, the aperture pattern 5 is completed with only the remaining film part 2-2.
申请公布号 JPS6195529(A) 申请公布日期 1986.05.14
申请号 JP19840216284 申请日期 1984.10.17
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 AKITANI HIDEO
分类号 H01L21/302;H01L21/306;H01L21/3065;(IPC1-7):H01L21/302 主分类号 H01L21/302
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