| 摘要 |
PURPOSE:To reduce aspect ratio and improve coverage by forming a barrier layer consisting of a metal or metal silicide which does not easily generate silicon at the interface of a silicon layer and Al layer of a contact hole. CONSTITUTION:The SiO2 films 12, 13 are formed on a silicon substrate 11 and a gate electrode 14 is formed by polysilicon. Thereafter, impurity layers 15, 15 are formed by doping impurity to the main surface of the silicon substrate 11. A PSG film 16 is then formed on the entire part. A resist film 17 is then formed to the entire part of surface, a contact hole portion is opened forming a contact hole 18 to the PSG film 16 and SiO2 film 13. Thereafter, Mo film or MoSi2 film 19 is formed to the entire part. Next, the Al film is formed to the entire part, the Al wiring 20 is then formed by patterning and it is connected to the impurity layer through Mo, MoSi2 film 19. Thereby, sucking and precipitation of silicon to the Al wiring from the silicon substrate can be prevented by the barrier layer and connection with a low resistance can be attained. |
