发明名称 SEMICONDUCTOR MEMORY
摘要 <p>PURPOSE:To improve smoothing function by supplying grounding potential directly to the grounding terminal of a smoothing condenser from a grounding potential supplying section through a grounding potential supplying wiring of a separate system installed independently from a grounding potential supplying wiring for supplying grounding potential to a memory cell array and peripheral circuits. CONSTITUTION:The first grounding potential supplying wiring 13 is formed as a common grounding potential supplying wiring that suplies grounding potential supplied from outside of the device to a grounding potential supplying pad 12 to the memory cell array 15 and peripheral circuits 14. On the other hand, the second grounding potential supplying wiring 21 is formed as an exclusive grounding potential supplying wiring that supplies grounding potential supplied from outside of the device to the grounding potential supplying pad 12 only to a smoothing condenser 17 and a reference voltage generating circuit 16. Thus, large difference in amplitude is formed between the second grounding potential supplying wiring 21 connected to the smoothing condenser 17 and the same phase noise component that appears on a reference voltage supplying wiring 20, and this is smoothened sufficiently by the smoothing condenser 17.</p>
申请公布号 JPS6120291(A) 申请公布日期 1986.01.29
申请号 JP19840139617 申请日期 1984.07.05
申请人 NIPPON DENKI KK 发明人 HAYANO HITONORI
分类号 G11C11/413;G06F1/00;G06F1/26;G11C11/34;G11C11/401 主分类号 G11C11/413
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