Semiconductor device with a Schottky contact, and method of making such a device.

摘要

A Schottky contact is formed between one or more metals, or more generally a system of refractory metals (1), and a layer of semiconducting material (2). This is a known type of Schottky contact which degrades at temperatures above 750 DEG C during operations involved in the production of a semiconductor device such as a transistor. In the invention, an interfacial layer (8) forming a barrier to diffusion is introduced between the metallization (1) and the semiconductor layer (2). This interfacial layer is made from a chemical compound with an additional molecule, in which the bond between the metal and the additional molecule is stronger than the bond between the metal and the semiconducting material. The interfacial layer is preferably a metallic nitride, and has a thickness of the order of a few hundred angstrom units. Application to MESFETs on III-V materials and to varactors. <IMAGE>