| 摘要 |
PURPOSE:To obtain a multilayer wiring structure which assures easy ultramini aturization, excellent moisture resistance and flatness characteristic by using a double-layer film of soluble polyimide resin film and silicon oxide film obtained by separating organic group from silicon oxide organic compound as an interlayer insulating film and forming an silicon oxide film with reference to light or electron beam simultaneously with forming a pattern. CONSTITUTION:A semiconductor substrate 1 providing a first wiring conductor layer 2 is coated with soluble polyimide resin solution by the spin coating method and solvent is removed by heat processing under the nitrogen ambient. A soluble polyimide resin film 7 is coated with silicon oxide organic compound 8 and solvent is removed by heat processing. Thereafter, silicon oxide film 9 is obtained by separating organic group from silicon oxide organic compound film 8 under the oxygen ambient using ArF laser and simultaneously a pattern is formed. With this silicon oxide film 9 used as the mask, the soluble polyimide resin film 7 is etched by oxygen plasma. Then Al is vacuum deposited, a resist mask is formed thereon and a second wiring conductivelayer 9 is formed by the etching. |
