发明名称 INTEGRATED DISTRIBUTION BRAGG'S REFLECTION TYPE SEMICONDUCTOR LASER
摘要 PURPOSE:To control the oscillating wavelength in a stable uniaxial mode state in the range of several Angstrom by forming an active region, a phase control region and a DBR region, and forming a control electrode also on the DBR region. CONSTITUTION:An active region 1, a phase control region 2 and a DBR region 3 are formed, and a control electrode 20 is formed on the DBR regions. Thus, the wavelength range of approx. several Angstrom is varied substantially in a stable uniaxial mode operation state by altering the control current. Further, the oscillating spectral beam width at the uniaxial mode oscillation time also depends upon the control state, and the oscillating spectral beam width of 4MH2 is obtained by setting to the most stable state. For example, the length of the region 2 is 300mum, the length of the region 3 is 150mum and the length of the region is 150mum, thereby varying the wavelength of 45Angstrom by implanting a current of approx. 60mA.
申请公布号 JPS6195592(A) 申请公布日期 1986.05.14
申请号 JP19840216802 申请日期 1984.10.16
申请人 NEC CORP 发明人 KITAMURA MITSUHIRO
分类号 H01S5/00;H01S5/0625 主分类号 H01S5/00
代理机构 代理人
主权项
地址