发明名称 REACTIVE VACUUM PLATING APPARATUS
摘要 PURPOSE:To form stably a high quality film at a high speed in a reactive vacuum plating apparatus by cooling an ionization discharge electrode placed between a evaporating source and a substrate so as to increase the rate of ionization and power for the evaporating source. CONSTITUTION:A vacuum vessel 1 is evacuated to about 5X10<-5>Toor, and the prescribed electric power is supplied to an electron beam evaporating source 3 to melt and evaporate the source 3. Gaseous nitrogen is introduced into the vessel 1 from the gas introducing inlet 2 to regulate the internal pressure of the vessel 1 to about 1X10<-4>Torr. Positive DC voltage is applied to a circular ionization discharge electrode 5 made of a pipe, and negative DC voltage is applied to a substrate 4 to form a film on the substrate 4. At this time, the electrode 5 is cooled by feeding cooling water into the pipe so that the melting or thermal deformation of the electrode 5 is prevented.
申请公布号 JPS6196068(A) 申请公布日期 1986.05.14
申请号 JP19840217196 申请日期 1984.10.16
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 IKEDA TANEJIRO
分类号 C23C14/32;(IPC1-7):C23C14/32 主分类号 C23C14/32
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