| 摘要 |
PURPOSE:To reduce unevenness in coating of a resist by observing patterns for position detection in two or more of chips positioning on an axis passing through the center of a wafer and making an arbitrary angle to the X and Y directions. CONSTITUTION:When a chip 2 and a pattern for position detection in a chip 5, both of which are arranged at an angle of 45 deg. with respect to the X and Y directions on a wafer 1 are observed, a resist which is dropped at the center of the rotating wafer 1 spreads on the wafer 1 to be coated on a position detection pattern 3 in the X direction and a position detection pattern 4 in the Y direction while it forms an angle of about 45 deg.. Consequently, though the same degree of unevenness in coating is produced on the detection patterns in the X and Y directions, it is smaller than that in the case where the position detection patterns are on the X axis or the Y axis because an angle from the direction along which the resist advances is about 45 deg.. This reduces an amount of errors in position detection caused by unevenness in coating of the position detection patterns, thereby to enable highly accurate positioning of the wafer to be carried out. |
