Schottky gate field effect transistor and manufacturing method thereof.

摘要

In a GaAs field effect transistor of the invention, a gate layer (14) is formed on a semi-insulative substrate (10). The gate layer (14) is made of a conductive material forming a Schottky junction between the substrate (10) and the gate layer. Source and drain regions (16, 18) are formed in the substrate (10) to have a first conductivity type. Barrier layers (24, 26) are formed in the substrate (10) to have a second conductivity type. The barrier layers (24, 26) are formed to surround the source and drain regions (16,18), and suppress a current component from leaking from the source and drain regions (16, 18) to the substrate (10) when the field effect transistor is operative.