| 摘要 |
PURPOSE:To obtain a device having high density and high performance by superposing an inter-layer insulating film while coating the upper surface of a gate electrode with an insulating film and forming a connecting hole partially superposed to the gate electrode on viewing from an upper surface by etching the inter-layer insulating film in an anisotropic manner. CONSTITUTION:A P type Si substrate 1 is insulated and isolated 2, a gate electrode 4 is shaped onto the gate insulating film 2, a CVDSiO2 film 9 is superposed, and As is implanted to form source-drain layers 5. A CVDSiO2 film 6 and a resist 10 are superposed, and an opening is bored so as to be superposed to the electrode 4. SiO2 is left on the side surface of the electrode 4 through anisotropic etching by CHF3 gas while using the resist 10 as a mask, and an Al wiring 8 is shaped. According to the constitution, the opening 7 is shaped to the gate electrode 4 in a self-alignment shape, thus forming a device having high density. The distance of a channel under the gate electrode and the hole 7 is shortened, and a resistance component in the source-drain layers can be reduced, thus obtaining the device having high performance. |
