| 摘要 |
<p>A METHOD OF FORMING A SHALLOW AND HIGH CONDUCTIVITY BORON DOPED LAYER IN SILICON Implanting, with low energy (e.g. 75 Kev and below), a dose of boron difluoride (BF2) into an area on a silicon substrate which is post-damaged or pre-damaged by a silicon implant so that annealing, or activation, can be accomplished at temperatures in the range of 550.degree.C to 900.degree.C.</p> |
