发明名称 |
METHOD FOR FORMING AN ISOLATION REGION FOR ELECTRICALLY ISOLATING ELEMENTS |
摘要 |
<p>METHOD FOR FORMING AN ISOLATION REGION FOR ELECTRICALLY ISOLATING ELEMENTS A method for forming an isolation region having a submicron width thereof in a semiconductor substrate comprising the steps of: forming a metal or a metal silicide layer on the semiconductor substrate; then forming a resist layer on the metal or metal silicide layer; patterning the resist layer; selectively etching the metal or metal silicide layer and the semiconductor substrate by the reactive ion etching process using a mixture of chlorine-containing gas and oxygen gas to form a groove in the surface portion of the semiconductor substrate located around the edge of the resist layer; and forming an insulating layer in the groove.</p> |
申请公布号 |
CA1204525(A) |
申请公布日期 |
1986.05.13 |
申请号 |
CA19830440422 |
申请日期 |
1983.11.04 |
申请人 |
FUJITSU LIMITED |
发明人 |
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分类号 |
H01L21/32;B44C1/22;C03C15/00;H01L21/033;H01L21/308;H01L21/762;H01L21/763 |
主分类号 |
H01L21/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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