| 摘要 |
<p>LIQUID PHASE EPITAXIAL GROWTH METHOD In liquid phase epitaxial growth of a compound semiconductor layer on a substrate, an unsaturated solution is brought into contact with a solute source crystalline plate. The plate dissolves into the solution, which creates a supercooling condition in the solution without decrease of the solution temperature. The crystalline plate has a denser crystal face than that of the substrate, and/or the lattice constant of the crystalline plate is considerably different from that of the substrate.</p> |
