| 发明名称 |
Apparatus for producing a semiconductor device |
| 摘要 |
A process tube that is impermeable to impurities for use in the manufacture of semiconductor devices. The process tube is made of sintered silicon carbide and it may optionally be infiltrated with elemental silicon. The inner surface of the process tube includes a layer of high density silicon carbide to prevent diffusion of impurity species through the walls of the process tube.
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| 申请公布号 |
US4587928(A) |
申请公布日期 |
1986.05.13 |
| 申请号 |
US19800200546 |
申请日期 |
1980.10.24 |
| 申请人 |
TOKYO SHIBAURA ELECTRIC CO., LTD. |
发明人 |
YONEZAWA, TOSHIO;MURAOKA, HISASHI |
| 分类号 |
H01L21/673;C30B25/08;C30B25/12;C30B31/10;C30B31/14;H01L21/205;H01L21/304;H01L21/31;(IPC1-7):B05C11/00 |
主分类号 |
H01L21/673 |
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