发明名称 |
Diffusion of dopant into a semiconductor wafer |
摘要 |
A process for doping a semiconductor material is performed during a deposition phase in a plurality of steps, first at a relatively low temperature to form a high concentration glass formation layer of the dopant on a semiconductor wafer at a high rate, and then raising the temperature slowly to provide an initial drive-in of the dopant. After etch removal of excess glass formation, the wafers are subjected to a base diffusion at an elevated temperature in an oxidizing atmosphere.
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申请公布号 |
US4588454(A) |
申请公布日期 |
1986.05.13 |
申请号 |
US19840684758 |
申请日期 |
1984.12.21 |
申请人 |
LINEAR TECHNOLOGY CORPORATION |
发明人 |
KHADDER, WADIE N.;WANG, JIA-TARNG |
分类号 |
H01L21/225;H01L21/311;(IPC1-7):H01L21/385 |
主分类号 |
H01L21/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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