发明名称 |
Process for forming TiSi2 layers of differing thicknesses in a single integrated circuit |
摘要 |
Using a process in accordance with the teachings of this invention, an integrated circuit may be fabricated providing refractory metal silicide layers, such as TiSi2, of differing thicknesses to provide optimal reductions in the sheet resistances of the regions in which refractory metal silicide layers are formed. In one embodiment of the present invention a field effect transistor having a polycrystalline silicon gate is fabricated to provide a gate having optimally minimized sheet resistance and source and drain regions having TiSi2 layers of the appropriate thickness to avoid punch-through leakage problems.
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申请公布号 |
US4587718(A) |
申请公布日期 |
1986.05.13 |
申请号 |
US19840676686 |
申请日期 |
1984.11.30 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
HAKEN, ROGER A.;ALPERIN, MICHAEL E.;LAU, CHI K. |
分类号 |
H01L29/78;H01L21/28;H01L21/285;H01L21/336;H01L21/768;H01L29/417;H01L29/43;H01L29/45;H01L29/49;(IPC1-7):H01L21/285 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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