| 摘要 |
PURPOSE:To implement miniaturization of a chip size and high integration, by sequentially forming a passivation film and a polyimide resin on a conductor wiring that is formed on a semiconductor substrate, and connecting the conductor wiring and a plurality of bonding pads through an opening provided through the passivation film and the polyimide resin. CONSTITUTION:A conductor wiring 1 is formed on a semiconductor substrate 10. A passivation film 2 and a polyimide resin 3 are formed on the entire surface. A nitride film 4 is formed on the resin 3 by a plasma CVD method. By the plasma dry etching of resist 5 on the film 4, the nitride film 4 at a contact part 8 is removed. The resin 3 and the resist 5 on the film 4 at the contact part 8 are removed by the plasma of CF4+O2. The film 2 and the nitride film 4 on the resin 3 at the contact part 8 are removed by plasma dry etching. A conductor wiring metal 6 is formed on the entire surface. Only the conductor wiring metal 6 at a bonding pad part is formed on the resin 3 by photolithography etching. |
