| 摘要 |
PURPOSE:To obtain wiring metals, which are stable even through heat treatment after forming the wiring metals and have excellent heat-resisting properties, by shaping each electrode onto a GaAs substrate and forming the multilayer wiring metals containing W onto these electrodes. CONSTITUTION:Source-drain ohmic electrodes 13 and a gate Schottky electrode 14 are shaped onto an active layer 12 in a GaAs substrate 11. A first wiring 15 and a second wiring 17 containing W are formed while interposing an inter- layer insulating film 16. W represents a high melting-point metal, and has excellent heat-resisting properties, thus maintaining initial wiring structure up to a high temperature. Accordingly, even when the temperature of the substrate 11 is brought to a high temperature in order to shape the layer 16, the increase of FET characteristics, particularly, source parasitic resistance, can be prevented after forming the wirings 15 and 17. |
