| 摘要 |
PURPOSE:To prevent defective disconnections at stepped sections of wirings or defective short circuits by arranging wiring segments in layers upper than the third layer wiring in a semiconductor device with wiring layers of three layer wirings or more so as to cross with wiring segments in layers lower than the third layer wiring at an angle of approximately 45 deg. in a plane shape. CONSTITUTION:A first layer wiring 11 and a second layer siring 12 cross at right angles, and a third layer wiring 13 crosses with the first layer wiring 11 and the second layer wiring 12 at an angle of approximately 45 deg.. An area of which an intersection 16 between the first layer wiring 11 and the third layer wiring 13 and an intersection 15 between the second layer wiring 12 and the third layer wiring 13 cross is brought to approximately 1.4 times as large as an area of which an intersection 14 between the first layer wiring 11 and the second layer wiring 12 cross at that time, and the wirings are reinforced even when a design criterion regarding wirings is not varied to disconnections at stepped sections of wirings. Accordingly, defectives due to disconnections at stepped sections of wirings can be prevented only by disposing wirings of three layers or more so as to cross with the first layer wiring or the second layer wiring at approximately 45 deg., and an algorithm on a CAD can be designed without complication. |
