| 摘要 |
PURPOSE:To enable the optical outputs of various laser beams to be controlled independently of each other, by disposing active layers having different oscillation wavelengths on waveguide layers disposed on the same optical axis. CONSTITUTION:Each of the semiconductor lasers has a double heterostructure in which diffraction lattices 23, 24 are provided on waveguide layers 13, and active layers 14a, 14b are respectively provided on the lattices 23, 24. The active layers 14a, 14b respectively have compositions and energy band gaps, which correspond to their respective oscillation wavelengths. When a voltage is applied between a p-side electrode 21a and an n-side electrode 20 of the first semiconductor laser so as to inject current, light is emitted from the active layer 14a, and this light propagates through the waveguide layer 13 and leaks to the diffraction lattice 23. In the second semiconductor laser also, when a voltage is applied to the p-side electrode 21b and the n-side electrode 20 so as to inject current, the light emitted from the active layer 14b propagates through the waveguide layer 13 and leaks to the diffraction lattice 23. Thus, the diffraction lattice 24 serves as one resonator mirror, and a cleavage surface 27 serves as the other resonator mirror. |
